Power Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current ...
Power
Transistors
2SD1775, 2SD1775A
Silicon
NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
10.5min.
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 80 100 60 80 6 4 2 0.5 25 1.3 150 –55 to +150 Unit V
1.5max.
1.1max.
2.0
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1775 2SD1775A 2SD1775 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
emitter voltage 2SD1775A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W
10.0±0.3
8.5±0.2 6.0±0.3
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current 2SD1775 2SD1775A
(TC=25˚C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA VCE = 12V, IC = 200mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 =...
