Transistor
2SD1820, 2SD1820A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1219 and 2...
Transistor
2SD1820, 2SD1820A
Silicon
NPN epitaxial planer type
For general amplification Complementary to 2SB1219 and 2SB1219A
Unit: mm
s Features
q q
2.0±0.2 1.3±0.1
2.1±0.1 0.425 1.25±0.1 0.425
0.65
Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit
0.65
1
3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol
2
0.2
0.9±0.1
0.7±0.1
V
emitter voltage 2SD1820A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
0 to 0.1
0.2±0.1
EIAJ:SC–70 S–Mini Type Package
Marking symbol : W(2SD1820) X(2SD1820A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1820 2SD1820A 2SD1820 2SD1820A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
max 0.1
0.15–0.05
+0.1
0.3–0
+0.1
Unit µA V
30 60 25 50 5 85 40 0.35 200 6
*2
V V 160 340
Emitter to ba...