2SD1821

Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 150 185 150 185 5 100 50 150 150 –55 ~ +150 Unit 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1821 2SD1821A 2SD1821 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.2 0.9±0.1 V 0.7±0.1 0 to 0.1 0.2±0.1 emitter voltage 2SD1821A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : P(2SD1821) L(2SD1821A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD1821 2SD1821A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 2.3 150 150 185 5 130 330 1 V MHz pF mV min typ max 1 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emit...