Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q q q q q
2....
Transistor
2SD1823
Silicon
NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q q q q q
2.1±0.1 0.425 1.25±0.1 0.425
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
(Ta=25˚C)
Ratings 50 40 15 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.9±0.1
0 to 0.1
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–70 S–Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT
*
Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz
min
typ
max 100 1
0.15–0.05
+0.1
0.3–0
+0.1
Unit nA µA V V V
50 40 15 400 1000 0.05 12...