Medium Power Transistor (32V, 1A)
2SD1858
Features 1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA) 2) Complimen...
Medium Power
Transistor (32V, 1A)
2SD1858
Features 1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA) 2) Compliments 2SB1237
Structure Epitaxial planar type
NPN silicon
transistor
Dimensions (Unit : mm)
6.8 +− 0.2
2.5 +− 0.2
4.4 −+ 0.2
1.0 0.9
14.5 −+0.5
0.5+− 0.1 (1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45 +− 0.1
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
1 A (DC) IC
2 A (Pulse) ∗1
Collector power dissipation
PC
1
W ∗2
Junction temperature
Tj 150 °C
Storage temperature
Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1/2 ∗2 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1
square CM or larger.
+ +
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-em...
