2SD1863

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 Abbreviated symbol : DF 2SD1768S 2.3+−00..21 0.5±0.1 3±0.2 4±0.2 (1) Base (2) Collector (3) Emitter 2±0.2 3Min. 5.5+−00..31 1.5±0.3 0.9 (15Min.) 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) 0.55±0.1 1.0±0.2 ROHM : CPT3 EIAJ : SC-63 2SD1863 6.8±0.2 (1) Base (2) Collector (3) Emitter 2.5±0.2 0.45+−00..1055 2.5+−00..41 5 0.5 0.45−+00..0155 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 80 Emitter-base voltage VEBO 5 Collector current 1 IC 2 2SD1898 0.5 2 Collector power dissipation 2...