Silicon Transistors. 2SD1913 Datasheet

2SD1913 Transistors. Datasheet pdf. Equivalent

2SD1913 Datasheet
Recommendation 2SD1913 Datasheet
Part 2SD1913
Description PNP/NPN Epitaxial Planar Silicon Transistors
Feature 2SD1913; Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2S.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SD1913 Datasheet




Sanyo Semicon Device 2SD1913
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Applications
General power amplifier.
Package Dimensions
unit : mm
2041A
Features
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
Micaless package facilitating mounting.
Specifications
( ):2SB1274
Absolute Maximum Ratings at Ta=25°C
[2SB1274/2SD1913]
4.5
10.0 2.8
3.2
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
()60
()60
()6
()3
()8
2
20
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
Ratings
min typ max
Unit
(--)100
µA
(--)100
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000 TS IM 8-2055 No.2246-1/4



Sanyo Semicon Device 2SD1913
2SB1274/2SD1913
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
hFE1
hFE2
fT
Cob
VCE(sat)
VBE
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
VCE=(--)5V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)0.2A
VCE=(--)5V, IC=(--)0.5A
IC=(--)1mA, IE=0
IC=5mA, RBE=
IE=(--)1mA, IC=0
* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
min
70*
20
(--)60
(--)60
(--)6
Ratings
typ
100
(60)40
(--)0.4
(--)0.8
max
280*
(--)1
(--)1
Unit
MHz
pF
V
V
V
V
V
--3.0
2SB1274
--2.5
--2.0
--1.5
IC -- VCE
--35mA
--30mA
--25mA
--20mA
--15mA
--10mA
--1.0
--5mA
--0.5
0 IB=0
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--3.6
2SB1274
--3.2 VCE= --5V
--6
IT02816
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE -- V IT02818
IC -- VCE
3.0
30m2A5mA
20mA
2SD1913
2.5 40mA 35mA
15mA
2.0
10mA
1.5
1.0 5mA
0.5
0 IB=0
0123456
Collector-to-Emitter Voltage, VCE -- V IT02817
IC -- VBE
3.6
2SD1913
3.2 VCE=5V
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02819
No.2246-2/4



Sanyo Semicon Device 2SD1913
2SB1274/2SD1913
1000
7
5
hFE -- IC
2SB1274
VCE= --5V
1000
7
5
3 Ta=120°C
2 25°C
--40°C
3
2
100 100
77
55
hFE -- IC
Ta=120°C
25°C
--40°C
2SD1913
VCE=5V
3
2
7 --0.01 2
3
2
3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
fT -- IC
23 5
IT02820
2SB1274
VCE= --5V
3
2
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A
IT02821
fT -- IC
3
2SD1913
2 VCE=5V
100
7
5
3
2
100
7
5
3
2
10
7
5
7 --0.01 2 3
5 7 --0.1 2 3
5 7 --1.0 2 3
5
Collector Current, IC -- A
IT02822
VCE(sat) -- IC
2
2SB1274
--1.0 IC / IB=10
7
5
3
2 25°C
--0.1
7
5
Ta=120--°4C0°C
3
2
--0.01
7
7 --0.01 2 3
5 7 --0.1
23
5 7 --1.0 2 3
5
Collector Current, IC -- A
IT02824
VBE(sat) -- IC
2
2SB1274
IC / IB=10
--10
7
5
3
2
25°C
--1.0 Ta=120°C
7
5 --40°C
3
7 --0.01
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT02826
10
7
5
5
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01 2 3 5 0.1 2 3 5 1.0
Collector Current, IC -- A
VCE(sat) -- IC
23 5
IT02823
2SD1913
IC / IB=10
25°C
Ta=120°--C40°C
0.01
7
7 0.01
2
10
7
5
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
VBE(sat) -- IC
23 5
IT02825
2SD1913
IC / IB=10
3
2
1.0
7
5
3
7 0.01
25°C
Ta= --40°C
120°C
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
23 5
IT02827
No.2246-3/4







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