2SD1970

2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 32 kΩ (Typ) 0.4 kΩ (Typ) 1 1 2 3 2SD1970 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) ID PC * Tj Tstg 1 Ratings 24 24 7 2 4 2 10 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. VCE(sat) VBE(sat) VD Min 24 25 7 — — 7000 2000 — — — Typ — — — — — — — — — — Max 32 33 — 1 5 30000 — 1.5 2.0 2.0 — V V V Unit V V V µA µA Test conditions I C = 1 mA, IE = 0 I C = 1 A, L = 20 mH, RBE = ∞ I E = 5 mA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VCE = 2 V, IC = 0.5 A*1 VCE = 2 V, IC = 2 A*1 I C = 2 A, IB = 2 mA*1 I C = 2 A, IB = 2 mA*1 I D = 2 A*1 2 2SD1970 Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A) 3 1.0 0.3 0.1 0.03 IC (max) Area of Saf...