Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification Complementary...
Power
Transistors
2SD1975, 2SD1975A
Silicon
NPN triple diffusion planar type
For high power amplification Complementary to 2SB1317 and 2SB1317A
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings 180 200 180 200 5 25 15 150 3.5 150 –55 to +150 Unit V
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
emitter voltage 2SD1975A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature www.DataSheet4U.com
V
1 2 3
V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current 2SD1975 2SD1975A
(TC=25˚C)
Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 10A, IB = 1A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 200 20 60 20 1.8 2.5 V V MHz pF 200 min typ max 50 50 50 Unit µA µA
Forward current transfer r...