2SD1993

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 +0.1 (Ta=25˚C) 1 2 3 0.45–0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.5±0.5 2.5±0.5 +0.1 Ratings 55 55 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max 100 1 14.5±0.5 0.85 Low noise voltage NV. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 0.8 s Feat...