2SD1998

Ordering number : EN3130A 2SB1324 / 2SD1998 SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SB1324 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current DC Current Gain Marking 2SB1324 : BL 2SD1998 : DM Symbol ICBO hFE1 hFE2 Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A Ratings (--)40 (--)30 (--)6 (--)3 (--)5 1.5 150 --55 to +150 Unit V V V A A W °C °C min 75 50 Ratings typ max (--)1.0 Unit μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intende...