2SD2000

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 16.7±0.3 14.0±0.5 Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VBE(sat) VCE(sat) fT ton tstg tf * Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.4A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V min typ ...