2SD2012

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc ≤ 25 oC Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature October 2003 Value 60 60 7 3 6 0.5 25 1500 -65 to 150 150 Unit V V V A A A W V oC oC 1/5 2SD2012 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VCB = 60 V VEB = 7 V IC = 50 mA IC = 2 A IB = 0.2 A VBE∗ Base-Emitter Voltage IC = 0.5 A VCE = 5 V hFE∗ DC Current Gain IC = 0.5 A IC = 2 A VCE = 5 V VCE = 5 V fT Transition frequency VCE = 5 V IC = 0.5 A CC...