2SD2017

2SD2017 Darlington Equivalent C circuit B (4kΩ) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 300 V VCEO 250 V VEBO 20 V IC 6 A IB 1 A PC 35(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=20V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA IC=2A, IB=2mA VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) Ratings 100max 10max 250min 2000min 1.5max 2.0max 20typ 65typ Unit µA mA V V V MHz pF sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) 100 50 2 10 –5 5 IB2 (mA) –10 ton (µs) 0.6typ tstg (µs) 16.0typ tf (µs) 3.0typ External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) I C– V CE Characteristics (Typical) 6 40mA 20mA 8mA 5 4mA 2mA 4 1mA 3 2 IB=0.4mA 1 0 0 1 2 3 4 5 6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 2 IC=8A 1 IC=3A IC=1A 0 0.2 0.5 1 5 10 50 100 Base Current IB(mA) 500 1000 Collector Current IC(A...