Power Transistors
2SD2029
Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB134...
Power
Transistors
2SD2029
Silicon
NPN triple diffusion planar type
For high power amplification Complementary to 2SB1347
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings 160 160 5 20 12 120 3.5 150 –55 to +155 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚C)
Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 160V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 8A, IB = 0.8A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 210 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit µA µA
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
*...