2SD2031

2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD2030 160 160 5 100 400 150 –55 to +150 2SD2031 200 200 5 100 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol 2SD2030 V(BR)CBO 2SD2031 Collector to emitter breakdown voltage 2SD2030 V(BR)CEO 2SD2031 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO Min 160 200 160 200 5 — — — — 10 V µA I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE1 B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD2030 I CBO 2SD2031 DC current transfer ratio 60 30 — — — — — — — — 140 3.8 200 — 1.5 0.5 — — V V MHz pF VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. 2 2SD2030, 2SD2031 Maximum Collector Dissipat...