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2SD2045 Dataheets PDF



Part Number 2SD2045
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SD2045 Datasheet2SD2045 Datasheet (PDF)

Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V 16.2 Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Ta.

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Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V 16.2 Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Ta=25°C) Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA mA 23.0±0.3 V 9.5±0.2 a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 3 IB2 (mA) –3 ton (µs) 0.5typ tstg (µs) 5.5typ tf (µs) 1.5typ 3.35 B C E Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 6 20mA V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V C E =2V) 6 A A 5m 2m 1 mA 0.7m A 5 Collector Current I C (A) 5 Collector Current I C (A) 4 0.5m A 2 4 p) Cas 2 1 2 25˚C 2A 1 ˚C ( 1 0 0 1 2 3 4 5 6 0 0.1 0.5 1 5 10 50 100 0 0 1 Base-Emittor Voltage V B E (V) –30˚C 125 (Case (Cas 4A e Te eT I C =8A mp) Temp ) 3 I .4 m B= 0 A em 3 3.0 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =2V) 10000 5000 DC Curr ent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =2V) 10000 5000 θ j- a (˚C /W) θ j-a – t Characteristics 5 Typ D C Cur r ent Gai n h F E 12 1000 500 5˚ C 1000 500 ˚C 25 C 0˚ –3 Transient Thermal Resistance 1 0.5 100 50 0.03 0.1 0.5 1 5 6 100 50 0.03 0.1 0.5 1 56 0.2 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 120 20 Safe Operating Area (Single Pulse) 50 P c – T a Derating 100 Cut -off Fre quen cy f T ( MH Z ) 5 Collector Cur rent I C (A) 80 M aximum Power Dissipa ti on P C ( W) Typ 10 1m s 40 W ith 10 ms DC In 30 fin ite 60 1 0.5 Without Heatsink Natural Cooling 0.1 he at si 20 nk 40 20 10 Without Heatsink 0 0 –0.05 –0.1 –0.5 –1 –5 –6 0.05 3 5 10 50 100 200 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 143 .


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