Document
Ordering number:EN3720
2SB1388 : PNP Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors
2SB1388/2SD2093
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
· High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2039A
[2SB1388/2SD2093]
( ) : 2SB1388
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE
fT VCE(sat)
VCB=(–)80V, IE=0 VCE=(–)5V, IC=0 VCE=(–)3V, IC=(–)5A VCE=(–)5V, IC=(–)5A IC=(–)5A, IB=(–)10mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)5A, IB=(–)10mA
E : Emitter C : Collector B : Base SANYO : TO-3PML
Ratings (–)110 (–)100 (–)6 (–)10 (–)15 3.0 45 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
1500
4000 20
(–1.0) 0.9
max (–)0.1 (–)3.0
(–)1.5
(–)2.0
Unit
mA mA
MHz V V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/5111MH, JK (KOTO) No.3720–1/4
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time
Storage Time
Fall Time
2SB1388/2SD2093
Symbol
Conditions
V(BR)CBO V(BR)CEO
ton
IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified test circuit.
tstg See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Electrical Connection
Ratings min typ (–)110 (–)100
(0.7) 0.6
(1.4) 4.8
(1.5) 1.6
max
Unit
V V µs µs µs µs µs µs
No.3720–2/4
2SB1388/2SD2093
No.3720–3/4
2SB1388/2SD2093
Specifications of any and all SANYO products described or contained herein stipulate the performance,.