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2SD2093 Dataheets PDF



Part Number 2SD2093
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistors
Datasheet 2SD2093 Datasheet2SD2093 Datasheet (PDF)

Ordering number:EN3720 2SB1388 : PNP Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors 2SB1388/2SD2093 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute M.

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Ordering number:EN3720 2SB1388 : PNP Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors 2SB1388/2SD2093 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT VCE(sat) VCB=(–)80V, IE=0 VCE=(–)5V, IC=0 VCE=(–)3V, IC=(–)5A VCE=(–)5V, IC=(–)5A IC=(–)5A, IB=(–)10mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)5A, IB=(–)10mA E : Emitter C : Collector B : Base SANYO : TO-3PML Ratings (–)110 (–)100 (–)6 (–)10 (–)15 3.0 45 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 1500 4000 20 (–1.0) 0.9 max (–)0.1 (–)3.0 (–)1.5 (–)2.0 Unit mA mA MHz V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1598HA (KT)/5111MH, JK (KOTO) No.3720–1/4 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time 2SB1388/2SD2093 Symbol Conditions V(BR)CBO V(BR)CEO ton IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified test circuit. tstg See specified test circuit. tf See specified test circuit. Switching Time Test Circuit Electrical Connection Ratings min typ (–)110 (–)100 (0.7) 0.6 (1.4) 4.8 (1.5) 1.6 max Unit V V µs µs µs µs µs µs No.3720–2/4 2SB1388/2SD2093 No.3720–3/4 2SB1388/2SD2093 Specifications of any and all SANYO products described or contained herein stipulate the performance,.


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