2SD2117

Ordering number:EN3204 Features · Darlington connection. · High DC current gain. · Large current capacity, wide ASO. NPN Epitaxial Planar Silicon Transistor 2SD2117 General Driver Applications Package Dimensions unit:mm 2064A [2SD2117] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 Specifications 1.0 0.9 1 0.6 0.5 23 2.54 2.54 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=40V, IE=0 VEB=6V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=10mA VCE=10V, IC=50mA IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 Ratings 80 50 10 1.5 3 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 4000 3000 80 50 10 120 0.9 1.5 max 100 100 1.5 2.0 Unit nA nA MHz V V V V V Any and all SANYO products described or contained herein do not have specifications that can h...