Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2129
2SD2129
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 100 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
IC
3 A
Pulse ICP 5
Base current
IB 0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
JEDEC JEITA
― SC-67
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω Emitter
1
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2006-11-21
Electrical Characteristics (Tc = 25°C)
2SD2129
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat)
VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 1.5 A VCE = 3 V, IC = 3 A IC = 1.5 A, IB = 3 mA IC = 3 A, IB = 12 mA IC = 1.5 A, IB = 3 mA
Min
― ― 100 2000 1000 ― ― ―
Typ. Max
― 100 ― 2.5 ―― ― 15000 ―― ― 1.5 ― 2.0 ― 2.0
Unit μA mA V
V V
Turn-on time Switching time Storage time
Fall time
IB1 IB2
20 Ω
ton
Input IB1
Output ― 1.0 ―
tstg
20 μs
IB2
― 5.0 ―
μs
VCC ≈ 30 V
tf IB1 = −IB2 = 3 mA, duty cycle ≤ 1%
― 2.0 ―
Marking
D2129
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
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2006-11-21
Collector current IC (A)
IC – VCE
8
Common emitter Tc = 25°C
6
5 2.5
1.5
1 4
0.7
0.5
2 IB = 0.3 mA
0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
10000
hFE – IC
5000 3000
1000
Tc = 100°C 25
−55
500 300
100 0.05 0.1
Common emitter VCE = 3 V
0.3 0.5 1
35
10
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
2SD2129
IC – VBE
8
Common emitter VCE = 3 V 6
4
Tc = 100°C 2
−55
25 0 0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
4.0
VCE – IB
2.4
2.0 IC = 5 A
1.6
3 1.2
1
0.8 0.1
0.4 0 0.1
Common emitter Tc = 25°C
0.3 0.5 1
3 5 10
30 50 100
Base current IB (mA)
300
DC current gain hFE
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
10 Common emitter
5 IC/IB = 250
3
1 25
0.5 0.1
Tc = −55°C
100 0.3 0.5
1
3
Collector current IC (A)
5
10
Base-emitter saturation voltage VBE (sat) (V)
VBE (sat) – IC
10 Common emitter
5 IC/IB = 250
3 Tc = −55°C
25 1
100
0.5 0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
3
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2006-11-21
Transient thermal resistance rth (°C/W)
2SD2129
100 (1) No heat sink Ta = 25°C
30 (2) Infinite heat sink Tc = 25°C
rth – tw
10
3 1
0.3 0.1 0.001
0.01
0.1 1 10
Pulse width tw (s)
(1) (2)
100 1000
Safe Operating Area
10
IC max (pulsed)* 5
IC max (continuous) 3
10 ms*
100 μs* 1 ms*
1 DC operation Tc = 25°C
0.5 0.3
0.1
0.05
0.03 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with increase in temperature.
VCEO max
0.01 1
3 5 10
30 50 100
Collector-emitter voltage VCE (V)
300
Collector power dissipation PC (W)
25 20 (1)
PC – Ta
(1) Tc = Ta Infinite heat sink
(2) No heat sink
15
10
5 (2)
0 0 25 50 75 100 125 150
Ambient temperature Ta (°C)
175
Collector current IC (A)
4
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2006-11-21
2SD2129
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recen.