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2SD2129 Dataheets PDF



Part Number 2SD2129
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2129 Datasheet2SD2129 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 5 Base c.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 5 Base current IB 0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 20 JEDEC JEITA ― SC-67 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 http://store.iiic.cc/ 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD2129 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 1.5 A VCE = 3 V, IC = 3 A IC = 1.5 A, IB = 3 mA IC = 3 A, IB = 12 mA IC = 1.5 A, IB = 3 mA Min ― ― 100 2000 1000 ― ― ― Typ. Max ― 100 ― 2.5 ―― ― 15000 ―― ― 1.5 ― 2.0 ― 2.0 Unit μA mA V V V Turn-on time Switching time Storage time Fall time IB1 IB2 20 Ω ton Input IB1 Output ― 1.0 ― tstg 20 μs IB2 ― 5.0 ― μs VCC ≈ 30 V tf IB1 = −IB2 = 3 mA, duty cycle ≤ 1% ― 2.0 ― Marking D2129 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 http://store.iiic.cc/ 2006-11-21 Collector current IC (A) IC – VCE 8 Common emitter Tc = 25°C 6 5 2.5 1.5 1 4 0.7 0.5 2 IB = 0.3 mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 10000 hFE – IC 5000 3000 1000 Tc = 100°C 25 −55 500 300 100 0.05 0.1 Common emitter VCE = 3 V 0.3 0.5 1 35 10 Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) 2SD2129 IC – VBE 8 Common emitter VCE = 3 V 6 4 Tc = 100°C 2 −55 25 0 0 0.8 1.6 2.4 3.2 Base-emitter voltage VBE (V) 4.0 VCE – IB 2.4 2.0 IC = 5 A 1.6 3 1.2 1 0.8 0.1 0.4 0 0.1 Common emitter Tc = 25°C 0.3 0.5 1 3 5 10 30 50 100 Base current IB (mA) 300 DC current gain hFE Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 10 Common emitter 5 IC/IB = 250 3 1 25 0.5 0.1 Tc = −55°C 100 0.3 0.5 1 3 Collector current IC (A) 5 10 Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 10 Common emitter 5 IC/IB = 250 3 Tc = −55°C 25 1 100 0.5 0.1 0.3 0.5 1 3 Collector current IC (A) 5 10 3 http://store.iiic.cc/ 2006-11-21 Transient thermal resistance rth (°C/W) 2SD2129 100 (1) No heat sink Ta = 25°C 30 (2) Infinite heat sink Tc = 25°C rth – tw 10 3 1 0.3 0.1 0.001 0.01 0.1 1 10 Pulse width tw (s) (1) (2) 100 1000 Safe Operating Area 10 IC max (pulsed)* 5 IC max (continuous) 3 10 ms* 100 μs* 1 ms* 1 DC operation Tc = 25°C 0.5 0.3 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 0.01 1 3 5 10 30 50 100 Collector-emitter voltage VCE (V) 300 Collector power dissipation PC (W) 25 20 (1) PC – Ta (1) Tc = Ta Infinite heat sink (2) No heat sink 15 10 5 (2) 0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 175 Collector current IC (A) 4 http://store.iiic.cc/ 2006-11-21 2SD2129 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recen.


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