2SD2130

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) · Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 ± 10 60 ± 10 6 ±4 ±6 0.5 1.5 10 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLECTOR BASE ≈ 5 kΩ ≈ 200 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 45 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 IC = 10 mA, IB = 0 IE = 10 mA, IC = 0 VCE = 2 V, IC = 1 A VCE = 2 V, I...