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2SD2133 Dataheets PDF



Part Number 2SD2133
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2133 Datasheet2SD2133 Datasheet (PDF)

Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit: mm 4.5±0.2 • Low collector-emitter saturation voltage VCE(sat) 10.8±0.2 0.65±0.1 16.0±1.0 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO V.

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Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit: mm 4.5±0.2 • Low collector-emitter saturation voltage VCE(sat) 10.8±0.2 0.65±0.1 16.0±1.0 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 *1, 2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 0.5 A VCE = 5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 60 50 5 Typ Max Unit V V V µA  0.1 85 50 35 0.2 0.85 200 11 0.4 1.20 100 340 hFE3 VCE(sat) VBE(sat) fT Cob V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Publication date: May 2003 SJD00244BED 1 2SD2133 PC  Ta 2.0 Without heat sink IC  VCE 1.2 Ta=25˚C IB=10mA 9mA 1.0 8mA 7mA 6mA IC  I B 1.2 VCE=10V Ta=25˚C Collector power dissipation PC (W) 1.0 1.6 Collector current IC (A) 0.8 5mA 4mA Collector current IC (A) 0.8 1.2 0.6 3mA 0.6 0.8 0.4 0.4 2mA 0.4 0.2 1mA 0.2 0 0 40 80 120 160 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 VBE(sat)  IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 hFE  IC IC/IB=10 100 300 VCE=10V 1 10 Forward current transfer ratio hFE 250 200 Ta=75˚C Ta=25˚C 10−1 Ta=75˚C Ta=25˚C Ta=–25˚C 1 Ta=–25˚C Ta=75˚C Ta=25˚C 150 Ta=–25˚C 100 10−2 0.1 50 10−3 0.01 1 10 100 1 000 1 10 100 1 000 0 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT  I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB=10V f=200MHz TC=25˚C Cob  VCB 30 100 VCER  RBE Collector-emitter vo.


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