Document
Power Transistors
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
7.5±0.2
Unit: mm
4.5±0.2
• Low collector-emitter saturation voltage VCE(sat)
10.8±0.2
0.65±0.1
16.0±1.0
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
■ Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 *1, 2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
*1
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 0.5 A VCE = 5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 60 50 5
Typ
Max
Unit V V V µA
0.1 85 50 35 0.2 0.85 200 11 0.4 1.20 100 340
hFE3 VCE(sat) VBE(sat) fT Cob
V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340
Publication date: May 2003
SJD00244BED
1
2SD2133
PC Ta
2.0 Without heat sink
IC VCE
1.2
Ta=25˚C IB=10mA 9mA 1.0 8mA 7mA 6mA
IC I B
1.2
VCE=10V Ta=25˚C
Collector power dissipation PC (W)
1.0
1.6
Collector current IC (A)
0.8
5mA 4mA
Collector current IC (A)
0.8
1.2
0.6
3mA
0.6
0.8
0.4
0.4
2mA
0.4
0.2
1mA
0.2
0 0 40 80 120 160
0
0
0 2 4 6 8 10 12
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=10
hFE IC
IC/IB=10
100
300
VCE=10V
1
10
Forward current transfer ratio hFE
250
200
Ta=75˚C Ta=25˚C
10−1
Ta=75˚C Ta=25˚C Ta=–25˚C
1
Ta=–25˚C Ta=75˚C Ta=25˚C
150
Ta=–25˚C
100
10−2
0.1
50
10−3
0.01
1
10
100
1 000
1
10
100
1 000
0
1
10
100
1 000
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200
VCB=10V f=200MHz TC=25˚C
Cob VCB
30
100
VCER RBE
Collector-emitter vo.