Transistor
2SD2184
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1438
6....
Transistor
2SD2184
Silicon
NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1438
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings 150 150 5 1.5 1 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
1
2
3
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
+0.1
s Absolute Maximum Ratings
0.45–0.05
+0.1
(Ta=25˚C)
2.5±0.5
2.5±0.5
(HW type)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Co...