2SD2215A

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 7.2±0.3 0.8±0.2 1.1±0.1 1.0±0.2 +0.3 0.85±0.1 0.4±0.1 0.75±0.1 2.3±0.2 4.6±0.4 Ratings 350 400 250 300 5 1.5 0.75 15 1.3 150 –55 to +150 Unit V 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD2215A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V 3.0±0.2 10.2±0.3 7.2±0.3 A A W 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 ˚C ˚C 1 2 3 2.3±0.2 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2215 2SD2215A 2SD2215 2SD2215A 2SD2215 2SD2215A 4.6±0.4 (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC =...