DatasheetsPDF.com

2SD2218 Dataheets PDF



Part Number 2SD2218
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SD2218 Datasheet2SD2218 Datasheet (PDF)

Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolut.

  2SD2218   2SD2218


Document
Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)60 (–)30 (–)6 (–)8 (–)15 2 20 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1* hFE2 fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.15A Ratings min typ 70* 30 120 max (–)0.1 (–)0.1 280* (–0.5) 0.4 Unit mA mA MHz V V * : The 2SB1467/2SD2218 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2098HA (KT)/N120MH, JK (KOTO) No.3363–1/4 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 2SB1467/2SD2218 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO ton tstg IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified test circuit. See specified test circuit. tf See specified test circuit. Switching Time Test Circuit Ratings min typ (–)60 (–)30 (–)6 0.1 (0.2) 0.5 0.03 max Unit V V V µs µs µs µs No.3363–2/4 2SB1467/2SD2218 No.3363–3/4 2SB1467/2SD2218 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is .


2SD2216 2SD2218 2SD2219


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)