2SD2240A

Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2240 2SD2240A 2SD2240 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 0.45±0.1 0.3 (Ta=25˚C) Ratings 150 185 150 185 5 100 50 125 125 –55 ~ +125 Unit V emitter voltage 2SD2240A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : P(2SD2240) L(2SD2240A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD2240 2SD2240A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ 0 to 0.1 0.2±0.1 max 1 +0.1 Unit µA V V 150 185 5 130 330 1 150 2.3 150 Emitter to base voltage Forward current transfer ratio Collector to emitter satur...