2SD2241

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications 2SD2241 Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 5 ±4 ±6 0.3 2.0 25 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C Base Collector ≈ 4.5 kΩ ≈ 300 Ω Emitter JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2004-07-26 2SD2241 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1.5 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 6 mA IC = 3 A, IB = 6 mA IE = 1 A, IB = 0 Min Typ. Max Unit ― ― 100 2000 1000 ― ― ― ― ― ― ― ― ― ― ― 20 µA 2.5 mA ―V ― ― 1.5 V 2.0 V 2.0 V Turn-on time Switching time Storage time Fall time IB1 IB2 10 Ω ton Input IB1 Output ― 0.2 ― tstg 20 µs IB2 ― 1.5 ― µs VCC ≈ 30 V tf IB1 = ...