Document
Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1503
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 160 140 5 15 8 120 3.5 150 –55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V 20 2.0 6.0 1.2 140 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V
FE2
Rank classification
Q S P
Rank hFE2
5000 to 15000 7000 to 21000 8000 to 30000
2.0
1.5
Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V
26.0±0.5
10.0
2.0
4.0
3.0
1
Power Transistors
PC — Ta
200 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) 100 IB=2mA 10 TC=25˚C
2SD2276
IC — VCE
100
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000
Collector power dissipation PC (W)
30
Collector current IC (A)
150
8
1mA 0.9mA 0.8mA 0.7mA
10
6
0.6mA 0.5mA 0.4mA 0.3mA
3 TC=–25˚C 1 25˚C 0.3 100˚C
4
50
2 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 0.2mA
0.1 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=1000 100000
hFE — IC
1000
Cob — VCB
Collector output capacitance Cob (pF)
VCE=5V IE=0 f=1MHz TC=25˚C
Forward current transfer ratio hFE
30000
30
300
10000 TC=100˚C
10
100
3000 1000 300 100 30
3
TC=100˚C 25˚C –25˚C
30
25˚C
1
10
–25˚C
0.3
3
0.1 0.1
0.3
1
3
10
30
100
10 0.01 0.03
1 0.1 0.3 1 3 10 1 3 10 30 100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
ton, tstg, tf — IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C tstg ton tf
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C ICP 10ms DC t=1ms
Switching time ton,tstg,tf (µs)
Collector current IC (A)
16
10 3 1 0.3 0.1 0.03 0.01 0
10 IC 3 1 0.3 0.1 0.03 0.01
4
8
12
1
3
10
30
100
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) — t
1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1)
2SD2276
Thermal resistance Rth(t) (˚C/W)
10
(2)
1
0.1 10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
.