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2SD2276 Dataheets PDF



Part Number 2SD2276
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2276 Datasheet2SD2276 Datasheet (PDF)

Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.

  2SD2276   2SD2276


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Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 160 140 5 15 8 120 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V 20 2.0 6.0 1.2 140 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V FE2 Rank classification Q S P Rank hFE2 5000 to 15000 7000 to 21000 8000 to 30000 2.0 1.5 Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 26.0±0.5 10.0 2.0 4.0 3.0 1 Power Transistors PC — Ta 200 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) 100 IB=2mA 10 TC=25˚C 2SD2276 IC — VCE 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W) 30 Collector current IC (A) 150 8 1mA 0.9mA 0.8mA 0.7mA 10 6 0.6mA 0.5mA 0.4mA 0.3mA 3 TC=–25˚C 1 25˚C 0.3 100˚C 4 50 2 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 0.2mA 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 100000 hFE — IC 1000 Cob — VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 30000 30 300 10000 TC=100˚C 10 100 3000 1000 300 100 30 3 TC=100˚C 25˚C –25˚C 30 25˚C 1 10 –25˚C 0.3 3 0.1 0.1 0.3 1 3 10 30 100 10 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C tstg ton tf Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C ICP 10ms DC t=1ms Switching time ton,tstg,tf (µs) Collector current IC (A) 16 10 3 1 0.3 0.1 0.03 0.01 0 10 IC 3 1 0.3 0.1 0.03 0.01 4 8 12 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 2SD2276 Thermal resistance Rth(t) (˚C/W) 10 (2) 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 .


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