Document
Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
4.0±0.2
s Features
q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
(Ta=25˚C)
Ratings 40 20 7 5 8 400 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz 20 7 230 150 0.28 150 26
*2
min
typ
max 0.1 1.0 0.1
2.0±0.2
marking
+0.2 0.45–0.1
15.6±0.5
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
3.0±0.2
Unit µA µA µA V V
600
1.0
V MHz
50
pF
Pulse measurement
*1h
FE1
Rank classification
Q 230 ~ 380 R 340 ~ 600
Rank hFE1
1
Transistor
PC — Ta
500 2.4 Ta=25˚C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5
2SD2321
IC — VCE
6 VCE=2V
IC — VBE
Collector power dissipation PC (mW)
Collector current IC (A)
Collector current IC (A)
400
Ta=75˚C 4 25˚C
–25˚C
300
3
200
2
100
1mA
1
0 0 20 40 60 80 100 120 140 160
0 0 0.4 0.8 1.2 1.6 2.0 2.4
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=30 600
hFE — IC
VCE=2V
Forward current transfer ratio hFE
500 Ta=75˚C 400 25˚C 300 –25˚C 200
Ta=75˚C 25˚C –25˚C
25˚C
100
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT — IE
400 350 300 250 200 150 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 100
Cob — VCB
Collector output capacitance Cob (pF)
VCB=6V Ta=25˚C IE=0 f=1MHz Ta=25˚C
Area of safe operation (ASO)
100 30 Single pulse Ta=25˚C
Transition frequency fT (MHz)
Collector current IC (A)
80
10 ICP 3 1 0.3 0.1 0.03 IC t=1s t=10ms
60
40
20
0 –1 –3 –10 1 3 10 30 100
0.01 0.1
0.3
1
3
10
30
100
Emitter current IE (A)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
2
.