TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
2SD2353
Unit: mm
High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.4 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V...
