Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD2374 ...
Power
Transistors
2SB1548, 2SB1548A
Silicon
PNP epitaxial planar type
For power amplification Complementary to 2SD2374 and 2SD2374A
s Features
q q q
Unit: mm
15.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 25 2 150 –55 to +150 Unit V
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
3.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
9.9±0.3
4.6±0.2 2.9±0.2
2.6±0.1
emitter voltage 2SB1548A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V
0.55±0.15
1
2
A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TO–220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1548 2SB1548A 2SB1548 2SB1548A 2SB1548 2SB1548A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –10V, IC =...