2SD2382

Power Transistor 2SD2382 Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 65± 5 65± 5 6 ± 6 (pulse ± 10) 1 30 (Tc=25ºC) 150 –55 to +150 Unit V V V A A W ºC ºC Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min 4 (Ta=25ºC) Unit µA µA V V V mJ External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 a b 16.9 Typical Switching Characteristics VCC (V) 12 RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 30 IB2 (mA) –30 t on (µs) 0.25 t stg (µs) 0.8 tf (µs) 0.35 2.54 2.2 1.35 1.35 0.85 2.54 3.9 0.8 2.6 (13.5) 0.45 B C E a) Type No. b) Lot No. (Unit: mm) s IC — VCE Characteristics (typ.) 10 30mA 8 20mA s VCE (sat) — IB Temperature Characteristics (typ.) 0.75 (IC = 1.5A) s IC — VBE Temperature Characteristics (typ.) 6 5 VCE (sat) (V) 10mA 0.5 4 IC (A) IC (A) 6 5mA 4 3mA IB = 1mA 0.25 Ta = –55ºC 25ºC 75ºC 125ºC 3 2 1 Ta=55ºC 25ºC 75ºC 125ºC 2 0 0 1 2 3 4 5 0 1 5 10 50 100 400 0 0 0.5 1.0 1.5 VCE (V) IB (mA) VBE (V) s hFE — IC Characteristics (typ.) 5000 Typ 1000 (VCE = 1V) s hFE — IC Temperature Characteristics (typ.) 5000 (VCE = 1V) s j-a — t Characteristics 5 1000 hFE hFE 500 500 100 50 30 0.01 100 50 30 0.01 Ta = –55ºC 25ºC 75ºC 125ºC 0.05 0.1 0.5 1 5 10 (ºC/W) j-a 1 0.5 0....