2SD2386
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2386
Power Amplifier Appli...
2SD2386
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington power
transistor)
2SD2386
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 140 140 5 7 0.1
70
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
≈ 100 Ω
EMITTER
1 2003-02-04
2SD2386
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 6 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 140
5000
2000 ― ― ― ―
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
― 5.0 µA
― 5.0 µA
――
V
― 30000
――
― 2.5
V
― 3.0
V
30 ― MHz
90 ― pF
Marking
TOSHIBA D2386
hFE classification (A/B...