Document
2SD2387
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2387
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 140 140 5 8 0.1
80
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
≈ 100 Ω
EMITTER
1 2003-02-04
2SD2387
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 7 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 140
5000
2000 ― ― ― ―
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
― 5.0 µA
― 5.0 µA
――
V
― 30000
――
― 2.5
V
― 3.0
V
30 ― MHz
110 ―
pF
Marking
TOSHIBA D2387
hFE classification (A/B/C)
Product No. Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04
Collector current IC (A)
IC – VCE
10
Common emitter
Tc = 25°C 8
500 450 400 350
300 6 250
200 4
150
2 IB = 100 µA
0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
Collector current IC (A)
2SD2387
10 Common emitter
VCE = 5 V 8
IC – VBE
6 Tc = 100°C
4
2
−25 25
0 01234
Base-emitter voltage VBE (V)
5
DC current gain hFE
50000 30000
10000 5000 3000
1000 500 300
100 0.03
hFE – IC
Tc = 100°C
25 −25
Common emitter VCE = 5 V 0.1 0.3 1 3 10 30 50 Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
5 Common emitter
3 IC/IB = 250
1 −25
0.5 25 Tc = 100°C
0.3
0.1 0.03 0.05 0.1
0.3 0.5 1
3
Collector current IC (A)
5
10
PC – Ta
120 Tc = Ta Infinite heat sink
100
80
60
40
20
0 0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
Collector current IC (A)
Safe Operating Area
20
IC max (pulsed)* 10 IC max (continuous)
10 ms*
5
3 DC operation Tc = 25°C
100 ms*
1
*: Single nonrepetitive pulse
Tc = 25°C
0.5 Curves must be derated linearly with increase in
temperature. 0.3
5 10
30
50
VCEO max
100 300
Collector-emitter voltage VCE (V)
3 2003-02-04
Collector power dissipation PC (W)
2SD2387
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliabilit.