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2SD2387 Dataheets PDF



Part Number 2SD2387
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2387 Datasheet2SD2387 Datasheet (PDF)

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140.

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2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140 5 8 0.1 80 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) ≈ 100 Ω EMITTER 1 2003-02-04 2SD2387 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 7 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000 Typ. Max Unit ― 5.0 µA ― 5.0 µA ―― V ― 30000 ―― ― 2.5 V ― 3.0 V 30 ― MHz 110 ― pF Marking TOSHIBA D2387 hFE classification (A/B/C) Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 Collector current IC (A) IC – VCE 10 Common emitter Tc = 25°C 8 500 450 400 350 300 6 250 200 4 150 2 IB = 100 µA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector current IC (A) 2SD2387 10 Common emitter VCE = 5 V 8 IC – VBE 6 Tc = 100°C 4 2 −25 25 0 01234 Base-emitter voltage VBE (V) 5 DC current gain hFE 50000 30000 10000 5000 3000 1000 500 300 100 0.03 hFE – IC Tc = 100°C 25 −25 Common emitter VCE = 5 V 0.1 0.3 1 3 10 30 50 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 5 Common emitter 3 IC/IB = 250 1 −25 0.5 25 Tc = 100°C 0.3 0.1 0.03 0.05 0.1 0.3 0.5 1 3 Collector current IC (A) 5 10 PC – Ta 120 Tc = Ta Infinite heat sink 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Ambient temperature Ta (°C) Collector current IC (A) Safe Operating Area 20 IC max (pulsed)* 10 IC max (continuous) 10 ms* 5 3 DC operation Tc = 25°C 100 ms* 1 *: Single nonrepetitive pulse Tc = 25°C 0.5 Curves must be derated linearly with increase in temperature. 0.3 5 10 30 50 VCEO max 100 300 Collector-emitter voltage VCE (V) 3 2003-02-04 Collector power dissipation PC (W) 2SD2387 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliabilit.


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