TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications Power ...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications Power Amplifier Applications
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
100 80 5 7 1 1.5 40 150 −55 to 150
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10S2
Weight: 1.4 g (typ.)
1 2003-02-04
2SD2414(SM)
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
fT Cob
VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A IC = 4 A, IB = 0.4 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
ton
20 µs
Input IB1
Output
IB1 IB2
10 Ω
tstg IB2
VCC ≈ 30 V
tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
Min Typ. Max Unit
― ― 5 µA
― ― 5 µA
80 ― ―
V
100 ― 320
30 ― ―
― 0.25 0.5
V
― 0.9 1.4 V
― 10 ― MHz
― 200...