2SD2420

Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification I Features High forward current transfer ratio hFE: 2 000 to 10 000 Dielectric breakdown voltage of the package: > 5 kV 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Internal Connection C B Junction temperature Storage temperature E I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Base to emitter voltage (DC value) Collector to emitter saturation voltage VBE VCE(sat)1 VCE(sat)2 Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q fT ton tstg tf * Conditions VCB = 60 V, IE = 0 VCE = 30 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 3 A, IB1 = 12 mA, IB...