2SD2440

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application 2SD2440 Unit: mm · High breakdown voltage: VCBO = 100 V : VEBO = 18 V · Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) · High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 60 18 6 12 2 40 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-16F1A Weight: 5.8 g (typ.) 1 2003-02-04 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 100 V, IE = 0 ICER VCE = 80 V, RBE = 50 Ω IEBO VEB = 15 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 0.5 A hFE (2) VCE (sat) VBE (sat) fT Cob VCE = 5 V, IC = 5 A IC = 5 A, IB = 1 A IC = 5 A, IB = 1 A VCE = 10 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton 20 µs Input IB1 Output IB1 IB2 10 Ω Switching time Storage time Fa...