Transistor
2SD2441
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q
4.5...
Transistor
2SD2441
Silicon
NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45°
1.0–0.2
+0.1
0.4±0.08
4.0–0.20
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
0.5±0.08 1.5±0.1
0.4±0.04
(Ta=25˚C)
Ratings 10 10 7 2 1.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
3.0±0.15 2 1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
EIAJ:SC–62 Mini Power Type Package
Marking symbol : 1V
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Forward voltage
*1 Applicable
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob VF
*1
Conditions VCB = 7V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 1V, IC = 400mA*2 IC = 1A, IB = 25mA*2 VCB = 60V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz IF = 500mA
min
typ
max 1
10 10 7 200 0.17 190 50 1.3
*2
700 0.25 V MHz pF V
to the built-in diode.
Pulse measurement
2.5±0.1
Mini Power type package, all...