2SD2449
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2449
Power Amplifier Appli...
2SD2449
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington Power
Transistor)
2SD2449
Power Amplifier Applications
Unit: mm
High breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1594
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 160 160 5 10 1
150
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
≈ 10 Ω
EMITTER
1 2004-07-07
2SD2449
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 160 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 8 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 12 A IC = 8 A, IB = 8 mA VCE = 5 V, IC = 8 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 160
3000
2000 ― ― ― ―
Note: hFE (1) classification A: 3000 to 10000, B: 5000 to 15000, C: 7000 to 20000
Typ. Max Unit
― 5 µA
― 5 µA
――
V
― 20000
――
― 3.0
V
― 3.0
V
30 ― MHz
150 ―
pF
Marking
TOSHIBA 2SD2449
JAPAN
Part No. (or abbr...