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2SD2457 Dataheets PDF



Part Number 2SD2457
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2457 Datasheet2SD2457 Datasheet (PDF)

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to bas.

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Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3.0±0.15 (Ta=25˚C) Ratings 50 40 5 3 1.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC–62 Mini Power Type Package Marking symbol : 1Y Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE Rank classification (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 VCB = 5V, IE = –0.5A*2, f = 200MHz 150 45 *2 min typ max 1 100 10 50 40 80 120 220 1 1.5 VCB = 20V, IE = 0, f = 1MHz Pulse measurement Rank hFE Q 80 ~ 160 R 120 ~ 220 2.5±0.1 +0.25 Unit µA µA µA V V V V MHz pF 1 Transistor PC — Ta 1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5 2SD2457 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IB=40mA 35mA 30mA 2.5 2.0 1.5 10mA 1.0 0.5 5mA 25mA 20mA 15mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (A) 3.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 300 VCE=5V 240 fT — I E VCB=5V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 250 Transition frequency fT (MHz) 1 3 10 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 200 200 Ta=75˚C 150 25˚C –25˚C 100 160 120 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob — VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 .


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