Document
Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.0–0.2
+0.1
High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3.0±0.15
(Ta=25˚C)
Ratings 50 40 5 3 1.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
EIAJ:SC–62 Mini Power Type Package
Marking symbol : 1Y
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE Rank classification
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 VCB = 5V, IE = –0.5A*2, f = 200MHz 150 45
*2
min
typ
max 1 100 10
50 40 80 120 220 1 1.5
VCB = 20V, IE = 0, f = 1MHz
Pulse measurement
Rank hFE
Q 80 ~ 160
R 120 ~ 220
2.5±0.1
+0.25
Unit µA µA µA V V
V V MHz pF
1
Transistor
PC — Ta
1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5
2SD2457
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IB=40mA 35mA 30mA 2.5 2.0 1.5 10mA 1.0 0.5 5mA 25mA 20mA 15mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C
VCE(sat) — IC
IC/IB=10
Collector power dissipation PC (W)
1.0
Collector current IC (A)
3.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100
hFE — IC
IC/IB=10 300 VCE=5V 240
fT — I E
VCB=5V Ta=25˚C
Base to emitter saturation voltage VBE(sat) (V)
250
Transition frequency fT (MHz)
1 3 10
30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C
Forward current transfer ratio hFE
200
200 Ta=75˚C 150 25˚C –25˚C 100
160
120
80
50
40
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
0 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob — VCB
120
Collector output capacitance Cob (pF)
100
IE=0 f=1MHz Ta=25˚C
80
60
40
20
0 1 3 10 30 100
Collector to base voltage VCB (V)
2
.