2SD2461

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm · High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) · Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 2 4 0.4 1.3 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 1 2003-02-04 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 1 A IC = 0.5 A, IB = 5 mA VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Marking D2461 Product No. Lot No. 2SD2461 Min Typ. Max Unit ― ― 100 µA ― ― 100 µA 60 ― ― V 800 ― 3200 350 ― ― ― 0.3 1.0 V ― 0.7 1.0 V ― 17 ― MHz ― 30 ― pF Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respective...