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2SD2462 Dataheets PDF



Part Number 2SD2462
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SD2462 Datasheet2SD2462 Datasheet (PDF)

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur.

  2SD2462   2SD2462


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