2SD2530

Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm 4.2±0.2 For power amplification 13.0±0.2 10.0±0.2 1.0±0.2 5.0±0.1 I Features High forward current transfer ratio hFE Allowing supply with the radial taping Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 100 100 5 10 5 15 2 150 −55 to +150 °C °C Unit V V V A A W 2.5±0.2 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4 Package Internal Connection C B Junction temperature Storage temperature E I Electrical Characteristics TC = 25°C ± 2°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100 V, IE = 0 VCE = 80 V, IB = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 4 V, IC = 2 A VCE = 4 V, IC = 4 A IC = 2 A, IB = 2 mA IC = 4 A, IB = 16 mA Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time IC = 4 A, IB = 16 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 4 A,...