2SD2537
Transistors
Medium Power Transistor (25V, 1.2A)
2SD2537
!Features 1) High DC current gain. 2) High emitter-base...
2SD2537
Transistors
Medium Power
Transistor (25V, 1.2A)
2SD2537
!Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm)
2SD2537
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
0.5
(3)
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
∗1 Single pulse Pw=100ms
VCBO VCEO VEBO IC PC Tj Tstg
30 25 12 1.2 2 2 150 −55~+150
V V V A (DC) A (Pulse) ∗1 ∗2 W °C °C
ROHM : MPT3 EIAJ : SC-62
0.4
Parameter
Symbol
Limits
Unit
1.5
!Absolute maximum ratings (Ta = 25°C)
1.5 0.4
4.5
1.6
(2)
(1) Base (2) Collector (3) Emitter
∗2 When mounted on a 40×40×0.7mm ceramic board.
!Packaging specifications and hFE
Type 2SD2537 MPT3 DV∗ T100 1000 VW
∗ Denotes h
Package hFE Marking Code Basic ordering unit (pieces)
FE
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
∗Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 30 25 12 − − − 820 − −
Typ. − − − − − − − 200 20
Max. − − − 0.3 0.3 0.3 2700 − −
Unit V V V µA µA V − MHz pF IC=10µA IC=1mA IE=10µA VCB=30V VEB=12V
Conditions
IC/IB...
