2SD2544

Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 60 60 7 8 4 15 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V min typ max 10 10 Unit µA µA V 60 50...