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2SD2550

Toshiba Semiconductor

Silicon NPN Transistor

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l H...


Toshiba Semiconductor

2SD2550

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2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1700 V l Low Saturation Voltage : VCE (sat) = 5.0 V (Max.) l High Speed : tf = 0.6 µs (Max.) l Bult-in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 600 5 4 8 2 50 150 −55~150 UNIT V V V A A W °C °C EQUIVALENT CIRCUIT Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16E3A Weight: 5.5 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) EBO hFE VCE (sat) VBE (sat) VF fT Cob tstg tf VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 400 mA, IB = 0 VCE = 5 V, IC = 1 A IC = 3 A, IB = 0.8 A IC = 3 A, IB = 0.8 A IF = 4 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 3 A, IB1 (end) = 0.8 A fH = 15.75 kHz 1 MIN TYP. MAX UNIT ―― 1 mA 66 ― 200 mA 5 ―― V 8 ― 22 ― ―5 8 V ― ―...




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