Document
Power Transistors
2SD2556
Silicon NPN epitaxial planer type
Unit: mm
For power switching I Features
• High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 0.5 V
6.5±0.1 5.3±0.1 4.35±0.1
2.3±0.1 0.5±0.1
7.3±0.1
1.8±0.1
0.8 max.
2.5±0.1
0.75±0.1 2.3±0.1 4.6±0.1
1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0)
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 130 80 7 10 5 10 1 150 −55 to +150 °C °C Unit
1
(1.8)
2 3
1.0±0.2
V V V A A W
1: Base 2: Collector 3: Emitter
U Type Package
Internal Connection
C B E
Junction temperature Storage temperature
I Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P 130 to 260 Q 90 to 180
*
Conditions VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 2 A IC = 4 A, IB = 0.2 A IC = 4 A, IB = 0.2 A VCE = 10 V, IC = − 0.5 A, f = 10 MHz IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A VCC = 50 V
Min
Typ
Max 10 50
Unit µA µA V
80 45 90 260 0.5 1.5 30 0.5 1.5 0.15
VCE(sat) VBE(sat) fT ton tstg tf
V V MHz µs µs µs
(5.5)
1
.