Document
Equivalent circuit
C
Darlington
2SD2558
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz
16.2
B
(7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2558 200 200 6 5 2 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Series Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
23.0±0.3
V
9.5±0.2
mA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
5
I B = 1 .0
2 m 50 A
V CE ( sat ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
5 (V C E =4V)
A
50
mA
10 mA
4 Collector Current I C (A)
3
1 .2 m
A
Collector Current I C (A)
2.5
mA
4
3
em p) mp)
(Cas
(C
0 .3 m
1
as
A
0
0
2
4
6
0
0
1
25˚C
1
–30˚C (C
12
5˚C
ase Tem
2
2
eT
e Te
p)
0 .6 m
A
2
2.5
Collector-Emitter Voltage V C E (V)
Base-Emittor Voltage V B E (V)
(V C E =5V) 8000 5000 DC C urrent G ain h FE
˚C 125 C 25˚
–30 ˚C
θ j - a (˚ C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
5.0
1000 500
Transient Thermal Resistance
100 50
1.0
0.5 0.3
10 5 0.02
0.1
0.5
1
5
1
5
10
50 100 Time t(ms)
500 1000 2000
Collector Current I C (A)
f T – I E Characteristics (Typical)
30
Safe Operating Area (Single Pulse)
60
P c – T a Derating
10 Collector Curre nt I C ( A) 5
Maxim um Power Dissip ation P C (W)
40
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300
20
Without Heatsink 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
3.0
1m s
W ith In fin ite he at si nk
157
.