2SD2565

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q q q High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.65 max. 1.0 1.0 0.2 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 (Ta=25˚C) Ratings 400 400 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.5±0.1 s Absolute Maximum Ratings (HW type) s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency...