2SD2568

2SD2568 Transistors Power Transistor (400V, 0.5A) 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400 7 0.5 10 150 −55 to +150 Unit V V V A W(Tc=25°C) °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2568 CPT3 PQ TL 2500 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 400 400 7 − − − − 82 − − Typ. − − − − − − − − 13.5 8 Max. − − − 10 10 0.5 1.0 270 − − Unit V V V µA µA V V − MHz pF IC=50µA IC=1mA IE=50µA VCB=400V VEB=6V IC=100mA , IB=10mA IC=100mA , IB=10mA VCE/IC=5V/50mA VCE=5V , IE=−50mA , f=10MHz VCB=10V , IE=0A , f=1MHz Conditions Transition frequency Output capacitance Rev.A 1/2 2SD2568 Transistors zElectrical characteristics curves 200 COLLECTOR CURRENT : IC (mA) Ta=25 C mA 3.0mA A 2.5m .0mA 2 A 1.5m 1 COLLECTOR CURRENT : IC (A) VCE=3V DC CURRENT GAIN : hFE 1000 500 200 100 50 Ta=25 C 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=100°C 25°C −25°C 160 3....